analog power AM7400N n-channel 30-v (d-s) mosfet v ds (v) i d (a) 36.6 28.9 symbol limit units v ds 30 v gs 20 t a =25c 36.6 t a =70c 29.3 i dm 100 i s 7.1 a t a =25c 5 t a =70c 3.2 t j , t stg -55 to 150 c symbol maximum units 25 65 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature gate-source voltage v parameter drain-source voltage product summary 30 r ds(on) (m) 2.5 @ v gs = 10v 4 @ v gs = 4.5v maximum junction-to-ambient a continuous drain current a power dissipation a t <= 10 sec steady state r ja pulsed drain current b continuous source current (diode conduction) a i d a p d w thermal resistance ratings c/w parameter operating junction and storage temperature range absolute maximum ratings (t a = 25c unless otherwise noted) key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits dfn5x6 - 8l c preliminary 1 publication order number: ds_AM7400N_1a
analog power AM7400N parameter symbol test conditions min typ max unit gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55c 25 on-state drain current i d(on) v ds = 5 v, v gs = 10 v 50 a v gs = 10 v, i d = 26 a 2.5 v gs = 4.5 v, i d = 23.2 a 4 forward transconductance g fs v ds = 15 v, i d = 20 a 40 s diode forward voltage v sd i s = 3.6 a, v gs = 0 v 0.7 v total gate charge q g 65 gate-source charge q gs 17 gate-drain charge q gd 36 turn-on delay time t d(on) 18 rise time t r 106 turn-off delay time t d(off) 191 fall time t f 108 input capacitance c iss 6813 output capacitance c oss 1166 reverse transfer capacitance c rss 766 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. m r ds(on) nc v ds = 15 v, r l = 0.8 , i d = 20 a, v gen = 10 v, r gen = 6 v ds = 15 v, v gs = 4.5 v, i d = 20 a pf v ds = 15 v, v gs = 0 v, f = 1 mhz drain-source on-resistance dynamic zero gate voltage drain current static ua electrical characteristics i dss analog power (apl) reserves the right to make changes without further notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. typical parameters which may be provided in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customers technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal injury or death may occur. should buyer purchase or use apl products for any such unintended or unauthorized application, buyer shall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. ns c preliminary 2 publication order number: ds_AM7400N_1a
analog power AM7400N 1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics 0 0.002 0.004 0.006 0.008 0.01 0 20 40 60 80 100 rds(on) - on - resistance( ) id - drain current (a) 3.5v 4v 6v,8v,10v 4.5v 0 20 40 60 80 100 0 0.2 0.4 0.6 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v 3.5v 6v 4.5v 4v 0 0.005 0.01 0.015 0.02 0 2 4 6 8 10 rds(on) - on - resistance( ) vgs - gate - to - source voltage (v) tj = 25 c i d = 20 a 0 20 40 60 80 100 0 1 2 3 4 5 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz c preliminary 3 publication order number: ds_AM7400N_1a
analog power AM7400N 7. gate charge 9. safe operating area 10. single pulse maximum power dissipation typical electrical characteristics 8. normalized on-resistance vs junction temperature 11. normalized thermal transient junction to ambient 0 1 2 3 4 5 6 7 8 9 10 0 28 56 84 112 140 vgs - gate - to - source voltage (v) qg - total gate charge (nc) i d = 20 a v ds = 15 v 0.01 0.1 1 10 100 1000 0.1 1 10 100 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 50 100 150 200 250 300 350 400 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) r ja (t) = r(t) + r ja r ja = 65 c /w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 d = 0.5 0.2 0.1 0.05 0.02 single pulse p( pk ) t 1 t 2 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance( ) (normalized) tj - junctiontemperature( c) c preliminary 4 publication order number: ds_AM7400N_1a
analog power AM7400N package information c preliminary 5 publication order number: ds_AM7400N_1a
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